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FDSOI's Path to 7nm is Blighted by More Push and Little Pull

The FDSOI manufacturing process technology is being pushed by Europeans to get the process down to 10nm and 7nm nominal nodes, but without the flow of significant money from customers this development is unlikely to become a commercial success.
FDSOI's Path to 7nm is Blighted by More Push and Little Pull
FDSOI

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By Peter Clarke

What’s at stake: As a semiconductor manufacturing process industrialized in Europe, FDSOI is partially a badge of honor that has served European needs while showing the world that Europe has what it takes in R&D and engineering creativity. But it is a badge that is becoming tarnished and out of date.

Fully depleted silicon-on-insulator (FDSOI) is a style of semiconductor manufacturing that has offered an alternative to planar CMOS and FinFET for many years.

Now, the FDSOI manufacturing process technology is being pushed with European taxpayers’ money, with the goal to get the process down to 10nm and 7nm nominal nodes. FDSOI test chips are expected at 10nm in 2027 with further work happening in 2028 towards achieving the 7nm milestone.

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